Recent Publications

Papers

D.K. Schroder, "Electrical Characterization of Semiconductor Materials and Devices," in Semiconductor Characterization-Present Status and Future Needs (W.M. Bullis, D.G. Seiler, and A.C. Diebold, eds,) Am. Inst. Phys., Woodbury, NY, 215-226, 1996.

L.P. Lai and D.K. Schroder, "Characterization of SiO2 Inclusions in GaAs Grown by the LEC Method," Proc. Symp. Wide Bandgap Semiconductors (F. Ren et al., eds.), Electrochem. Soc., Pennington, NJ, 1996, 262-273.

D.K. Schroder, "Carrier Lifetimes in Silicon," IEEE Trans. Electron Dev. 44, 160-170, Jan. 1997.

Y.B. Park and D.K. Schroder, "C-t Analysis of MOS Capacitors Under Constant Current Stress," IEEE Electron Dev. Lett. 18, 132-134, April 1997.

D. Vasileska, D.K. Schroder, and D.K. Ferry, "Scaled Silicon MOSFET's: Degradation of the Total Capacitance," IEEE Trans. Electron Dev. 44, 584-587, April 1997.

J. Chuang, S.M. El-Ghazaly, D.K. Schroder, Y.H. Zhang, G.N. Maracas, and A.C. Reyes, "Air-Gap Transmission Lines for OEICs and MMICs Using Glass Substrates," Proc. 1997 IEEE MTT Int. Microwave Symp., Denver, CO, 265-268, June 1997.

I.C. Hsieh, C.H. Kuo, T.W. Sigmon, and D.K. Schroder, "Ellipsometry as Measurement of Poly-Si Characteristics in Excimer Laser Annealed a-Si Thin Films," Conf. Proc. Int. Workshop on Active Matrix Displays, 361-364, 1997.

C.H. Kuo, I.C. Hsieh, D.K. Schroder, G.N. Maracas, S. Chen, and T.W. Sigmon, "Ex-Situ Ellipsometry Characterization of Excimer Laser Annealed Amorphous Silicon Thin Films Grown by Low Pressure Chemical Vapor Deposition," Appl. Phys. Lett. 71, 359-361, July 1997.

C.H. Kuo, M.D. Boonzaayer, M.F. Herrera, D.K. Schroder, G.N. Maracas, and B. Johs, "Real Time In-Situ Thickness of Fabry-Perot Cavities in MBE by 44 and 88 Wavelength Ellipsometry," J. Cryst. Growth 175/176, 281-285, 1997.

S.Q. Hong, T. Wetteroth, H. Shin, S.R. Wilson, D. Werho, T.C. Lee, and D.K. Schroder, "Improvement in Gate Oxide Integrity on Thin-Film Silicon-on-Insulator Substrates by Lateral Gettering," Appl. Phys. Lett. 71, 3397-3399, Dec. 1997.

Z. Zhou and D.K. Schroder, "Boron Penetration in Dual Gate Process Technology," Semicond. Int. 21, 89-98, Jan. 1998.

J.A. Babcock, D.K. Schroder, and Y.C. Tseng, "Low-Frequency Noise in Near-Fully Depleted TFSOI MOSFET's," IEEE Electron Dev. Lett. 19, 40-43, Feb. 1998.

H. Shin, S. Hong, T. Wetteroth, S.R. Wilson, and D.K. Schroder, "Leakage Current Models of Thin Film Silicon-on-Insulator Devices," Appl. Phys. Lett. 72, 1199-1201, March 1998.

D.K. Schroder, M.S. Fung, R.L. Verkuil, S. Pandey, W.H. Howland, and M.Kleefstra, "Corona-Oxide-Semiconductor Generation Lifetime Characterization," Solid-State Electron. 42, 505-512, April 1998.

Y.B. Park and D.K. Schroder, "Degradation of Thin Tunnel Gate Oxide Under Constant Fowler-Nordheim Current Stress for a Flash EEPROM", IEEE Trans. Electron Dev. 45, 1361-1368, June 1998.

Z. Zhou, S. Tinkler, D.K. Schroder, R. Paulsen, P. Dahl, R. Keating, and C. Park, "Post Poly-Si Gate Rapid Thermal Nitridation for Boron Penetration Reduction and Oxide Reliability Improvement," IEEE Electron Dev. Lett. 7, 237-240, July 1998.

D.K. Schroder, "Recombination Lifetimes in Silicon," in Recombination Lifetime Measurements in Silicon (D.C. Gupta, F.R. Bacher, and W.M. Hughes, eds.), ASTM, STP 1340, 5-17, West Conshohocken, PA, 1998.

H. Shin, M. Racanelli, W.M. Huang, J. Foerstner, S.D. Choi, and D.K. Schroder, "A Simple Technique to Measure Generation Lifetime in Partially Depleted SOI MOSFETs," IEEE Trans. Electron Dev. 45, 2378-2380, Nov. 1998.

D.K. Schroder, "New Life in Detecting Defects," IEEE Circ. Dev. 14, 14-20, Nov. 1998.

S.Y. Lee and D.K. Schroder, "Thin p/p+ Epitaxial Layer Characterization With the Pulsed MOS Capacitor," Solid State Electron. 43, 103-111, Jan. 1999.

Y. Zhang, D.K. Schroder, H. Shin, S. Hong, T. Wetteroth, and S.R. Wilson, "Abnormal Transconductance and Transient Effects in Partially Depleted SOI MOSFETs," Solid State Electron. 43, 51-56, Jan. 1999.

H. Shin, M. Racanelli, W.M. Huang, J. Foerstner, T. Hwang, and D.K. Schroder, "Measurement of Carrier Generation Lifetime in SOI Devices," Solid-State Electron. 43, 349-353, Feb. 1999.

S.Y. Lee and D.K. Schroder, "Measurement Time Reduction for Generation Lifetimes," IEEE Trans. Electron Dev. 46, 1016-1021, May 1999.

P.G. Drennan, C.C. McAndrew, J. Bates, and D.K. Schroder, "Rapid Evaluation of the Root Causes of BJT Mismatch," IEEE Proc. Int. Conf. Microelectronic Test Struct., 122-127, March 2000.

J. Kang, D.K. Schroder, and D.P. Pivin, "Optimization of FIBMOSs Through 2-D Device Simulations," Proc. Modeling and Simulation of Microsystems 2000, 356-359, March 2000.

J.A. Babcock, P. Francis, R. Bashir, A.E. Kabir, D.K. Schroder, M.S.L. Lee, T. Dhayagude, W. Yindeepol, S.J. Prasad, A. Kalnitzky, M.E. Thomas, H. Haggag, K. Egan, A. Bergemont, and P. Jansen, "Precision Electrical Trimming of Very Low TCR Poly-SiGe Resistors", IEEE Electron Dev. Lett. 21, 283-285, June 2000.

D.K. Schroder, J.E. Park, S.E. Tan, B.D. Choi, S. Kishino, and H. Yoshida, "Frequency-Domain Lifetime Characterization," IEEE Trans. Electron Dev. 47, 1653-1661, Aug. 2000.

D.K. Schroder, "Trends in Lifetime Measurements," in High Purity Silicon VI (C.L. Claeys, P. Rai-Choudhury, M. Watanabe, P. Stallhofer, and H.J. Dawson, eds.), Electrochem. Soc., Pennington NJ, ECS PV2000-17, 365-382, 2000.

J.E. Park, D.K. Schroder, S.E. Tan, B.D. Choi, M. Fletcher, A. Buczkowski, and F. Kirscht, "Epitaxial Layer Lifetime Characterization in the Frequency Domain," in High Purity Silicon VI (C.L. Claeys, P. Rai-Choudhury, M. Watanabe, P. Stallhofer, and H.J. Dawson, eds.), Electrochem. Soc., Pennington NJ, ECS PV2000-17, 383-395, 2000.

D.K. Schroder, "Contactless Surface Charge Semiconductor Characterization," in Proc. 3rd Int. Symp. on Adv. Science and Technology of Si Materials, Japan Soc. For Promotion of Science, 452-458, 2000.

S.E. Tan, D.K. Schroder, M. Kohno, and M. Miyazaki, "Iron Contamination in Silicon Wafers Measured with the Pulsed MOS Capacitor Generation Lifetime Technique," IEEE Trans. Electron Dev. 47, 2392-2398, Dec. 2000.

M.Y. Hammad and D.K. Schroder, "Analytical Modeling of the Partially-Depleted SOI MOSFET," IEEE Trans. Electron Dev. 48, 252-258, Feb. 2001.

M.Y. Hammad and D.K. Schroder, "The Pseudo-Two-Dimensional Approach to Model the Drain Section in SOI MOSFETs," IEEE Trans. Electron Dev. 48, 386-387, Feb. 2001.

D.K. Schroder, "Surface Voltage and Surface Photovoltage: History, Theory and Applications," Meas. Sci. Technol. 12, R16-R31, March 2001.

J. A. Babcock, D. K. Schroder, W.-L. M. Huang and J. M. Ford , "Low-Frequency Noise in TFSOI Lateral npn Bipolar Transistors," IEEE Trans. Electron Dev. 48, 956-965, May 2001.

D.K. Schroder, "Low Power Silicon Devices", in The Encyclopedia of Materials: Science and Technology (K.H.J. Buschow, R.W. Cahn, M.C. Flemings. B. Ilschner, E.J. Kramer, and S. Mahajan, eds.), Elsevier, 2001.

J.E. Park, D.K. Schroder, S.E. Tan, B.D. Choi, M. Fletcher, A. Buczkowski, and F. Kirscht, "Silicon Epitaxial Layer Lifetime Characterization," J. Electrochem. Soc. 148, G411-G419, Aug. 2001.

B.D. Choi, D. K. Schroder, S. Koveshnikov, and S. Mahajan, "Latent Iron in Silicon," Jap. J. Appl. Phys. 40, L915 - L917, Sept. 2001.

B.D. Choi and D.K. Schroder, "Degradation of Ultrathin Oxides by Iron Contamination," Appl. Phys. Lett. 79, 2645-2647, Oct. 2001.

M.T. Quddus, T.A. DeMassa, D.K. Schroder and J. J. Sanchez " Modeling of Time Dependence of Hole Current and Prediction of QBD and tBD for Thin-Gate MOS Devices Based Upon Anode Hole Injection," Solid-State Electron., 45, 1773-1785, Oct 2001.

J. Kang, X. He, D. Vasileska, and D. K. Schroder, "Optimization of FIBMOS through 2D Silvaco ATLAS and 2D Monte Carlo particle-based device simulations", VLSI Design, 13, 251-256, Nov. 2001.

D.K. Schroder, "Contactless Surface Charge Semiconductor Characterization," Mat. Sci. Eng. B91-92, 196-210, 2002.

S.G. Kang and D.K. Schroder, "SOI Bulk and Surface Generation Properties Measured With the Pseudo-MOSFET," IEEE Trans. Electron Dev. 49, 1742-1747, Oct. 2002.

I. Knezevic, D. Vasileska, R. Akis, J. Kang, X. He and D. K. Schroder, "Monte Carlo Particle-based Simulation of FIBMOS: Impact of Strong Quantum Confinement on Device Performance", Physica B 314, 386-390, 2002.

D.K. Schroder, B.D. Choi, S.G. Kang, W. Ohashi, K. Kitahara, G. Opposits, T. Pavelka, and J.L. Benton, "Silicon Epitaxial Layer Recombination and Generation Lifetime Characterization," IEEE Trans. Electron Dev. 50, 906-912, April 2003.

J.E. Park, J. Shields, and D.K. Schroder, "Nonvolatile Memory Disturbs Due to Gate and Junction Leakage Currents," Solid-State Electron. 47, 855-864, May 2003.

D.K. Schroder and J.A. Babcock, "Negative Bias Temperature Instability: A Road to Cross in Deep Submicron CMOS Manufacturing," J. Appl. Phys. 94, 1-18, July 2003.

AKM Ahsan and D.K. Schroder. "Impact of Post-Oxidation Annealing on Low-Frequency Noise, Threshold Voltage, and Subthreshold Swing of p-Channel MOSFETs," IEEE Electron Dev. Lett. 25, 211-213, April 2004.

J.Y. Choi, S. Ahmed, T. Dimitrova, J.T.C. Chen, and D.K. Schroder, "The Role of the Mercury-Si Schottky Barrier Height in Pseudo-MOSFETs," IEEE Trans. Electron Dev. 51, 1380-1384, Sept. 2004.

D.K. Schroder,"Contactless Characterization of Silicon Wafers," 4th Int. Symp. Adv. Sci. Technol. of Si Mat., Jap. Soc. Promotion of Science, 208-215, 2004.

A.K.M. Ahsan and D.K. Schroder, "Impact of Channel Carrier Placement and Barrier Height Lowering on the Low-frequency Noise Characteristics of Surface-channel n-MOSFETs," Solid-State Electron. 49, 654-662, April 2005.

D. Baek, S. Rouvimov, B. Kim, T.C. Jo, and D.K. Schroder, "Surface Recombination Velocity of Silicon Wafers by Photoluminescence," Appl. Phys. Lett. 86, 112110, March 2005.

J.Y. Choi and D.K. Schroder, "Mercury Pseudo-MOSFET (HgFET) Drain Current Dependence on Surface Treatment," in Silicon-on-Insulator Technology and Devices XII (G.K. Celler, S. Cristoloveanu, J.G. Fossum, F. Gámiz, and K. Izumi, eds.), Electrochem. Soc. Proc. 2005-03, 301-308, 2005.

S. Kilgore, C. Gaw, H. Henry, and D.K. Schroder, "Electromigration of Electroplated Gold Interconnects," Mat. Res. Soc. Symp. Proc. 863, B8.30.1-B8.30.6, 2005.

J.J. Makwana and D.K. Schroder, "Non-volatile Floating Gate Memory Programming Enhancement Using Well Bias," IEEE Trans. Electron Dev. 53, 258-262, Feb. 2006.

J. Y. Choi and D.K. Schroder, "Effect of Surface Preparation on the Current-Voltage Behavior of Mercury-Probe Pseudo MOSFETs," IEEE Trans. Electron Dev. 53, 769-774, April 2006.

V.N. Faifer, M.I. Current and D.K. Schroder, "Characterization of Ultrashallow Junctions Using Frequency-dependent Junction Photovoltage and its Lateral Attenuation," Appl. Phys. Lett. 89, 1511231-3, Oct. 2006.

J.T.C. Chen, T. Dimitrova, D. Dimitrov, K. Park and D.K. Schroder,"Some Applications of Vbd and Qbd Tests", Proc. IEEE Integrated Reliability Workshop, Lake Tahoe, 130-135, 2005.

V.A. Kushner, J. Yang, J.Y. Choi, T.J. Thornton and D.K. Schroder, "SOI Low Frequency Noise and Interface Trap Density Measurements With the Pseudo MOSFET", in Silicon Materials Science and Technology X (H. Huff, H. Iwai, and H. Richter, eds.), Electrochem. Soc. ECS Transactions 2, 491-502, 2006.

J.H. Liao, M. Canonico, McD. Robinson, and D.K. Schroder, "Characterization of Strained Si/SiGe With Raman, Pulsed MOS Capacitor, and Gate Oxide Integrity Measurements," in SiGe and Ge: Materials, Processing, and Devices (D. Harame et al., eds.), Electrochem. Soc. ECS Transactions 3, 1211-1222, 2006.

D.K. Schroder, "Some Recent Advances in Contactless Silicon Characterization," in High Purity Silicon 9 (C. Claeys, R. Falster, W. Watanabe, P. Stallhofer, eds.), Electrochem. Soc. ECS Transactions 3, 321-337, 2006

D.K. Schroder, "Negative Bias Temperature Instability - What Do We Understand?," Microelectron. Reliab. 47, 841-852, June 2007.

M.J. Marinella, D.K. Schroder, T. Isaacs-Smith, A.C. Ahyi, J.R. Williams, G.Y. Chung, J.W. Wan, and M.J. Loboda, "Evidence of Negative Bias Temperature Instability in 4H-SiC Metal Oxide Semiconductor Capacitors," Appl. Phys. Lett. 90, 253508 1-3, June 2007.

P. Khare, DK. Schroder, and R. Sampson, "Design Optimization of a Buried Channel PMOS Integrable in a Si1-xGex BiCMOS Process" Solid-State Electron. 51, 828-837, June 2007.

V.N. Faifer, D.K. Schroder, M. I. Current, T. Clarysse, P. J. Timans, T. Zangerle, W. Vandervorst, T. M. H. Wong, A. Moussa, S. McCoy, J. Gelpey, W. Lerch, S. Paul, D. Bolze, and J. Halim, "Influence of Halo Implant on Leakage Current and Sheet Resistance of Ultrashallow p-n Junctions" J. Vac. Sci. Technol. B 25, 1588-1592, Sep/Oct 2007.

K. Park, M. Canonico, G.K. Celler, M. Seacrist, J. Chan, J. Gelpey, K. Holbert, S. Nakagawa, M. Tajima, and D.K. Schroder, "Effects of High Temperature Anneals and 60Co Gamma Ray Irradiation on Strained Silicon-on-Insulator (sSOI)," J. Appl. Phys. 102, 074507 1-5, Oct. 2007.

V.N. Faifer, D.K. Schroder, M.I. Current, T. Clarysse, P.J. Timans, T. Zangerle, W. Vandervorst, T.M.H. Wong, A. Moussa, S. McCoy, J. Gelpey, W. Lerch, S. Paul, D. Bolze, "Leakage Current and Dopant Activation Characterization of SDE/Halo CMOS Junctions with Non-contact Junction Photo-Voltage Metrology" in Frontiers of Characterization and Metrology for Nanoelectronics (D. G. Seiler, A.C. Diebold, R. McDonald, C.M. Gamer, D. Herr, R.P. Khosla, and E.M. Secula, eds.), Am. Inst. Phys. 246-250, 2007.

V.N. Faifer, M.I. Current, D.K. Schroder, T. Clarysse, and W. Vandervorst, "Junction Photovoltage Techniques for Ultrashallow Junction Characterization," in Analytical and Diagnostic Techniques for Semiconductor Materials, Devivces, and Processes 7 (D.K. Schroder, L. Fabry, R. Hockett, H. Shimizu, and A. Diebold, eds.), Electrochem. Soc. ECS Transactions 11, 135-147, 2007.

V. Kushner, K. Park, D.K. Schroder T.J. Thornton, "Low Frequency Noise Spectroscopy of SIMOX and Bonded SOI Wafers," IEEE Trans. Electron Dev., 54, 3378-3382, Dec. 2007.

M.J. Marinella, D.K. Schroder, G.Y. Chung, M.J. Loboda,T. Isaacs-Smith, and J.R. Williams, "A "Probe-Lift" MOS-Capacitor Technique for Measuring Very Low Oxide Leakage Currents and Their Effect on Generation Lifetime Extraction," IEEE Trans. Electron Dev. 55, 565-571, Feb. 2008.

D.H. Baek, S.B. Kim and D.K. Schroder, "Epitaxial Silicon Minority Carrier Diffusion Length by Photoluminescence," J. Appl. Phys. 104, 054503 1-5, Sept. 2008.

D.K. Schroder, "Nano Characterization of Materials," Int. J. High Speed Electron. Syst. 18, 861-878, Dec. 2008.

M.J. Marinella, D.K. Schroder, G.Y. Chung, M.J. Loboda, T. Isaacs-Smith, and J.R. Williams, "Charge Bursts Through Dielectric Layers of 4H-SiC/SiO2 MOS Capacitors" Proc. IEEE Int. Reliability Phys. Symp., 46, 623-624, 2008.

G. Chung, M.J. Loboda, M.J. Marinella, D.K. Schroder, P.B. Klein, T. Isaacs-Smith and J. W. Williams, "Generation and Recombination Carrier Lifetimes in 4H SiC Epitaxial Wafers" Mat. Sci. Forum 600-603, 485-488, 2009.

K. Park, P. Nayak, S. Cristoloveanu, and D.K. Schroder, "Pseudo-MOSFET Substrate Effects of Drain Current Hysteresis and Transient Behavior," IEEE Trans. Electron Dev. 56, 1269-1276, June 2009.K. Park, P. Nayak, and D.K. Schroder, "Pseudo-MOSFET Drain Current Transients: Influence of the Substrate," IEEE Electron Dev. Lett. 30, 993-995, Sept. 2009.

I. Ahsan, D.K. Schroder, E. Nowak, O. Gluschenkov, N. Zamdmer, R. Logan, "Impact of Intra-die Thermal Variation on Accurate MOSFET Gate-length Measurement," 20th IEEE/SEMI Adv. Semicond. Man. Conf. Proc., 174-177, 2009.

G. Ng, D. Vasileska, and D. K. Schroder, "Calculation of the Electron Hall Mobility and Hall Scattering Factor in 6H-SiC," J. Appl. Phys. 106, 053719 1-6, Sept. 2009.

I. Rapoport, P. Taylor, J. Kearns and D.K. Schroder, "Two-side Surface Photovoltage Studies for Implanted Iron Diffusion in Silicon During Rapid Thermal Anneal," J. Appl. Phys. 107, 013518 1-6, Jan. 2010.

K. Park, P. Nayak, and D.K. Schroder, "Role of the Substrate During Pseudo-MOSFET Drain Current Transients," Solid-State Electron. 54, 316-322, March 2010.

S. Bowden, C. Honsberg and D. Schroder, "Moore's Law of Photovoltaics," Future Photovoltaics, 1, 1-7, May 2010.

M. J. Marinella, D. K. Schroder, G. Chung, M. J. Loboda, T. Isaacs-Smith, and J. R. Williams, "Carrier Generation Lifetimes in 4H-SiC MOS Capacitors," IEEE Trans. Electron Dev. 57, 1910-1923, Aug. 2010.

D.K. Schroder, "Nanocharacterization of Materials", in High Purity Silicon 10 (E. Simoen, C. Claeys, R. Falster, C. Mazure, and P. Stallhofer, eds.), Electrochem. Soc. ECS Transactions 33, 3-22, 2010.

G. Ng, D. Vasileska and D.K. Schroder, "Empirical Pseudopotential Band Structure Parameters of
4H-SiC Using a Genetic Algorithm Fitting Routine
," Superlattices and Microstructures, 49, 109-115, Jan. 2011.

S.C. Puthentheradam, D.K. Schroder and M.N. Kozicki, "Inherent Diode Isolation in Programmable Metallization Cell Resistive Memory Elements," Appl. Phys. A, 102, 817-826, March 2011.

N. Chandra, V. Sharma, G.Y. Chung and D.K. Schroder, "Four-point Probe Characterization of 4H Silicon Carbide" Solid-State Electron. 64, 73-77, Oct. 2011.

P. Nayak, M. Seacrist and D.K. Schroder, "Unusual C-V Characteristics of High-Resistivity SOI Wafers," IEEE Electron Dev. Lett. 32, 1659-1661, Dec. 2011.

G. Ng, D. Vasileska and D.K. Schroder, “Empirical Pseudopotential Band Structure Parameters of 4H-SiC Using a Genetic Algorithm Fitting Routine,” Superlattices and Microstructures, 49, 109-115,  Jan. 2011.

X. Yang and D.K. Schroder, “Some Semiconductor Device Physics Considerations and Concepts,” IEEE Trans. Electron Dev. 59, 1993-1996, July 2012.

Book Chapters

G.N. Maracas and D.K. Schroder, "Electrical Characterization of Semiconductor Materials and Devices," in Characterization of Semiconductor Materials, Ed. G.E. McGuire, Noyes Publ., Park Ridge, NJ, 1-47, 1989.

D.K. Schroder, "Carrier Lifetimes in Silicon," in Handbook of Semiconductor Silicon Technology, Eds. W.C. O'Mara, R.B. Herring and L.P. Hunt, Noyes Publ., Park Ridge, NJ, 550-639, 1990.

T.J. Shaffner and D.K. Schroder, "Characterization Techniques for Oxygen in Silicon," in Semiconductors and Semimetals, 42, Academic Press, 53-93, 1994.

T.J. Shaffner and D.K. Schroder, "Electrical, Physical, and Chemical Characterization," in Handbook of Semiconductor Manufacturing Technology, Eds. Y. Nishi and R. Doering, Marcel Dekker, 889-935, 2000.

D.K. Schroder, B.W. Schueler, T.J. Shaffner, and G.S. Strossman, "Electrical, Physical, and Chemical Characterization" in Handbook of Semiconductor Manufacturing Technology, 2nd ed., Eds. R. Doering and Y. Nishi, CRC Press, Boca Raton, FL, 28-1-76, 2007.

D.K. Schroder, Electrical Characterization of Defects in Gate Dielectrics in Defects in Microelectronic Materials and Devices, Eds. D.M. Fleetwood, S.T. Pantelides and R.D. Schrimpf, CRC Press, Boca Raton, FL, 119-162, 2009.

Books

D.K. Schroder Advanced MOS Devices, Addison-Wesley, Reading, MA, 1987.

T.J. Shaffner and D.K. Schroder (eds.) Diagnostic Techniques in Semiconductor Characterization, Electrochem. Soc., Pennington, NJ, 1988.

D.K. Schroder Semiconductor Material and Device Characterization, J. Wiley, New York, NY, 1990.

D.K. Schroder, J.L. Benton, and P. Rai-Choudhury (eds.) Diagnostic Techniques for Semiconductor Materials and Devices/1994, Electrochem. Soc., Pennington, NJ, 1994.

P. Rai-Choudhury, J.L. Benton, D.K. Schroder, and T.J. Shaffner (eds.) Diagnostic Techniques for Semiconductor Materials and Devices/1997, Electrochem. Soc., Pennington, NJ, 1997.

D.K. Schroder Semiconductor Material and Device Characterization, 3rd Ed. J. Wiley, New York, NY, 2006.

B.O. Kolbesen, C. Claeys, P. Stallhofer, F. Tardif, J. Benton. T. Shaffner, D. Schroder, S. Kishino, and P. Rai-Choudhury (eds.) Analytical and Diagnostic Techniques for Semiconductor Materials, Devices, and Processes, ECS PV 99-16, Electrochem. Soc., Pennington, NJ, 1999.

B.O. Kolbesen, C. Claeys, P. Stallhofer, F. Tardif, D.K. Schroder, T.J. Shaffner, M. Tajima, and P. Rai-Choudhury (eds.) Analytical and Diagnostic Techniques for Semiconductor Materials, Devices, and Processes, ECS PV 2003-03, Electrochem. Soc., Pennington, NJ, 2003.

D.K. Schroder, L. Fabry, R. Hockett, H. Shimizu, and A. Diebold, Analytical and Diagnostic Techniques for Semiconductor Materials, Devices, and Processes 7, ECS Transactions - Washington, DC, Volume 11, 2007.

X. Yang and D.K. Schroder, Simulation of MOSFETs, BJTs and JFETs, Lambert Academic Publ., Germany, 2012.