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This is the only book that covers most of the material and device characterization techniques that are used in the semiconductor industry. It gives the necessary theoretical background of the various techniques, provides examples, and discusses the necessary device physics to understand the characterization methods. It includes homework problems, review questions and over 1400 references. The book is the result of teaching regular university courses and industrial short courses since 1981.
has continued its relentless advance since the publication of the second
edition. New techniques have been developed, others have been refined.
Probe techniques have further expanded, charge-based techniques have
become routine, as has transmission electron microscopy through the
use of focused ion beam sample preparation. Line width measurements
have become more difficult since lines have become very narrow and the
traditional SEM and electrical measurements have been augmented by optical
techniques like scatterometry and spectroscopic ellipsometry. In addition
to new measurement techniques, the interpretation of existing techniques
has changed. For example, the high leakage currents of thin oxides make
it necessary to alter existing techniques/theories for many MOS-based
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