Dieter Schroder is a member of the Silicon Wafer Engineering & Defect Science Center (SiWEDS). For more details about WEDS see: http://mse.utdallas.edu/siweds

What is the SiWEDS?

The mission of the Silicon Wafer Engineering & Defect Science Center (SiWEDS) is to create a unique multi-university, multi company culture to produce critical science and technology required by the international silicon materials industry to meet the future requirements for the advanced integrated circuit manufacturing. The education of graduate and post-graduate students in silicon materials engineering and defect science is a critical component of the Center's activities.

The Center has the following participants from the academic community and industry:

Academic community

* Arizona State University
* Hanyang University (Korea)
* Stanford University
* University of Texas - Dalllas
* University of Washington
* Waseda University

Industry members

* Hynix Semiconductor Inc.
* MEMC Electronic Materials
* Samsung Electronics
* Semiconductor Research Corp.
* Siltronic AG
* Texas Instruments


The research includes theory, experiment, modeling and simulation in three interrelated tasks:

* Fundamentals and issues related to the elimination of defects, and mechanisms and processes for gettering. Understanding wafers and alternate substrates such as Silicon on Insulator (SOI) and MeV ion implanted polished wafers, and processes for their elimination.
* Surface defects and contamination of wafers in device regions. Scaling progress indicates that the surface may be of greater importance than bulk defects and imperfections.
* Developing of metrology standards and applications in cross cutting areas, as well as formulating models and simulators for the various physical effects.

The educational and technical mission of the Center is achieved through strong interactions between graduate and post-graduate students and the company personnel of the Center Industry members.


Published papers related to WEDS activities are:

D.K. Schroder, "Carrier Lifetimes in Silicon," IEEE Trans. Electron Dev. 44, 160-170, Jan. 1997.

Y.B. Park and D.K. Schroder, "C-t Analysis of MOS Capacitors Under Constant Current Stress," IEEE Electron Dev. Lett. 18, 132-134, April 1997.

Y.B. Park and D.K. Schroder, "Degradation of Thin Tunnel Gate Oxide Under Constant Fowler-Nordheim Current Stress for a Flash EEPROM", IEEE Trans. Electron Dev. 45, 1361-1368, June 1998.

D.K. Schroder, "Recombination Lifetimes in Silicon," in Recombination Lifetime Measurements in Silicon (D.C. Gupta, F.R. Bacher, and W.M. Hughes, eds.), ASTM, STP 1340, 5-17, West Conshohocken, PA, 1998.

D.K. Schroder, "New Life in Detecting Defects," IEEE Circ. Dev. 14, 14-20, Nov. 1998.

S.Y. Lee and D.K. Schroder, "Thin p/p+ Epitaxial Layer Characterization With the Pulsed MOS Capacitor," Solid State Electron. 43, 103-111, Jan. 1999.

S.Y. Lee and D.K. Schroder, "Measurement Time Reduction for Generation Lifetimes," IEEE Trans. Electron Dev. 46, 1016-1021, May 1999.

D.K. Schroder, J.E. Park, S.E. Tan, B.D. Choi, S. Kishino, and H. Yoshida, "Frequency-Domain Lifetime Characterization," IEEE Trans. Electron Dev. 47, 1653-1661, Aug. 2000.

D.K. Schroder, "Trends in Lifetime Measurements," in High Purity Silicon VI (C.L. Claeys, P. Rai-Choudhury, M. Watanabe, P. Stallhofer, and H.J. Dawson, eds.), Electrochem. Soc., Pennington NJ, ECS PV2000-17, 365-382, 2000.

J.E. Park, D.K. Schroder, S.E. Tan, B.D. Choi, M. Fletcher, A. Buczkowski, and F. Kirscht, "Epitaxial Layer Lifetime Characterization in the Frequency Domain," in High Purity Silicon VI (C.L. Claeys, P. Rai-Choudhury, M. Watanabe, P. Stallhofer, and H.J. Dawson, eds.), Electrochem. Soc., Pennington NJ, ECS PV2000-17, 383-395, 2000.

D.K. Schroder, "Contactless Surface Charge Semiconductor Characterization," in Proc. 3rd Int. Symp. on Adv. Science and Technology of Si Materials, Japan Soc. For Promotion of Science, 452-458, 2000.

S.E. Tan, D.K. Schroder, M. Kohno, and M. Miyazaki, "Iron Contamination in Silicon Wafers Measured with the Pulsed MOS Capacitor Generation Lifetime Technique," IEEE Trans. Electron Dev. 47, 2392-2398, Dec. 2000.

D.K. Schroder, "Surface Voltage and Surface Photovoltage: History, Theory and Applications," Meas. Sci. Technol. 12, R16-R31, March 2001.

J.E. Park, D.K. Schroder, S.E. Tan, B.D. Choi, M. Fletcher, A. Buczkowski, and F. Kirscht, "Silicon Epitaxial Layer Lifetime Characterization," J. Electrochem. Soc. 148, G411-G419, Aug. 2001.

B.D. Choi, D. K. Schroder, S. Koveshnikov, and S. Mahajan, "Latent Iron in Silicon," Jap. J. Appl. Phys. 40, L915 - L917, Sept. 2001.

B.D. Choi and D.K. Schroder, "Degradation of Ultrathin Oxides by Iron Contamination," Appl. Phys. Lett. 79, 2645-2647, Oct. 2001.

D.K. Schroder, "Contactless Surface Charge Semiconductor Characterization," Mat. Sci. Eng. B91-92, 196-210, 2002.

S.G. Kang and D.K. Schroder, "SOI Bulk and Surface Generation Properties Measured With the Pseudo-MOSFET," IEEE Trans. Electron Dev. 49, 1742-1747, Oct. 2002.

D.K. Schroder, B.D. Choi, S.G. Kang, W. Ohashi, K. Kitahara, G. Opposits, T. Pavelka, and J.L. Benton, "Silicon Epitaxial Layer Recombination and Generation Lifetime Characterization," IEEE Trans. Electron Dev. 50, 906-912, April 2003.

J.Y. Choi, S. Ahmed, T. Dimitrova, J.T.C. Chen, and D.K. Schroder, "The Role of the Mercury-Si Schottky Barrier Height in Pseudo-MOSFETs," IEEE Trans. Electron Dev. 51, 1380-1384, Sept. 2004.

D. Baek, S. Rouvimov, B. Kim, T.C. Jo, and D.K. Schroder, "Surface Recombination Velocity of Silicon Wafers by Photoluminescence," Appl. Phys. Lett. 86, 112110, March 2005.

J. Y. Choi and D.K. Schroder, "Effect of Surface Preparation on the Current-Voltage Behavior of Mercury-Probe Pseudo MOSFETs," IEEE Trans. Electron Dev. 53, 769-774, April 2006.

V.A. Kushner, J. Yang, J.Y. Choi, T.J. Thornton and D.K. Schroder, "SOI Low Frequency Noise and Interface Trap Density Measurements With the Pseudo MOSFET", in Silicon Materials Science and Technology X (H. Huff, H. Iwai, and H. Richter, eds.), Electrochem. Soc. ECS Transactions 2, 491-502, 2006.

K. Park, M. Canonico, G.K. Celler, M. Seacrist, J. Chan, J. Gelpey, K. Holbert, S. Nakagawa, M. Tajima, and D.K. Schroder, "Effects of High Temperature Anneals and 60Co Gamma Ray Irradiation on Strained Silicon-on-Insulator (sSOI)," J. Appl. Phys. 102, 074507 1-5, Oct. 2007.

V. Kushner, K. Park, D.K. Schroder T.J. Thornton, "Low Frequency Noise Spectroscopy of SIMOX and Bonded SOI Wafers," IEEE Trans. Electron Dev., 54, 3378-3382, Dec. 2007.

D.H. Baek, S.B. Kim and D.K. Schroder, "Epitaxial Silicon Minority Carrier Diffusion Length by Photoluminescence," J. Appl. Phys. 104, 054503 1-5, Sept. 2008.

K. Park, P. Nayak, S. Cristoloveanu, and D.K. Schroder, "Pseudo-MOSFET Substrate Effects of Drain Current Hysteresis and Transient Behavior," IEEE Trans. Electron Dev. 56, 1269-1276, June 2009.

K. Park, P. Nayak, and D.K. Schroder, "Pseudo-MOSFET Drain Current Transients: Influence of the Substrate," IEEE Electron Dev. Lett. 30, 993-995, Sept. 2009.

K. Park, P. Nayak, and D.K. Schroder, "Role of the Substrate during Pseudo-MOSFET Drain Current Transients," Solid-State Electron. 54, 316-322, March 2010.